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| to ? 126 1. emitter 2. collector 3. base to-126 plastic-encapsulate transistors 2SD886 transistor (npn) features z low voltage z high current maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =5ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 1 a emitter cut-off current i ebo v eb =3v,i c =0 1 a h fe(1) * v ce =2v, i c =20ma 100 dc current gain h fe(2) * v ce =2v, i c =1a 100 400 collector-emitter saturation voltage v ce(sat) i c =2a,i b =200ma 0.5 v base-emitter saturation voltage v be(sat) i c =2a,i b =200ma 2 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 45 pf transition frequency f t v ce =5v,i c =100ma 80 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 3 a p c collector power dissipation 1 w r ja thermal resistance from junction to ambient 125 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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